- 您现在的位置：买卖IC网 > Sheet目录462 > IXTH240N055T (IXYS)MOSFET N-CH 55V 240A TO-247
Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTH240N055T
IXTQ240N055T
V DSS
I D25
R DS(on)
= 55 V
= 240 A
≤ 3.6 m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXTH)
V DSS
V DGR
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Transient
55
55
± 20
V
V
V
I D25
I LRMS
I DM
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
240
75
650
A
A
A
G
D
S
(TAB)
I AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
25
1.0
3
A
J
V/ns
TO-3P (IXTQ)
T J ≤ 175 ° C, R G = 5 ?
P D
T C = 25 ° C
480
W
T J
T JM
T stg
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
-55 ... +175
175
-40 ... +175
300
260
° C
° C
° C
° C
° C
G
D
S
G = Gate
D = Drain
(TAB)
M d
Mounting torque
1.13 / 10 Nm/lb.in.
S = Source
TAB = Drain
Weight
TO-3P
TO-247
5.5
6
g
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
175 ° C Operating Temperature
Advantages
BV DSS
V GS = 0 V, I D = 250 μ A
55
V
Easy to mount
Space savings
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.0
4.0
± 200
5
250
V
nA
μ A
μ A
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
R DS(on)
V GS = 10 V, I D = 25 A, Notes 1, 2
2.7
3.6
m ?
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99715 (11/06)
? 2006 IXYS CORPORATION All rights reserved
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTH24N50L
MOSFET N-CH 500V 24A TO-247
IXTH24N50Q
MOSFET N-CH 500V 24A TO-247
IXTH24N50
MOSFET N-CH 500V 24A TO-247
IXTH260N055T2
MOSFET N-CH 55V 260A TO-247
IXTH280N055T
MOSFET N-CH 55V 280A TO-247
IXTH28N50Q
MOSFET N-CH 500V 28A TO-247
IXTH2R4N120P
MOSFET N-CH 1200V 2.4A TO-247
IXTH30N25
MOSFET N-CH 250V 30A TO-247
相关代理商/技术参数
IXTH24N45
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR
IXTH24N45MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5)
IXTH24N45MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5)
IXTH24N50
功能描述:MOSFET 24 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH24N50
制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXTH24N50L
功能描述:MOSFET 24 Amps 500V 0.30 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH24N50MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247(5)
IXTH24N50MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247(5)